Memoria Ddr2 2gb Elpida Para Notebook (produto Novo)

Specifications

    * Density: 2G bits
    * Organization
      -64M words x 4 bits x 8 banks
    * Package: 68-ball FBGA
      -Lead-free (RoHS compliant)
    * Power supply: VDD, VDDQ = 1.8V +/- 0.1V
    * Data rate: 800Mbps/667Mbps/533Mbps (max.)
    * 1KB page size
      -Row address: A0 to A14
      -Column address: A0 to A9, A11
    * Eight internal banks for concurrent operation
    * Interface: SSTL_18
    * Burst lengths (BL): 4, 8
    * Burst type (BT):
      -Sequential (4, 8)
      -Interleave (4, 8)
    * /CAS Latency (CL): 3, 4, 5, 6
    * Precharge: auto precharge option for each burst access
    * Driver strength: normal/weak
    * Refresh: auto-refresh, self-refresh
    * Refresh cycles: 8192 cycles/64ms
      -Average refresh period
       7.8 µs at 0'C <= TC <= +85'C
       3.9 µs at +85'C < TC <= +95'C
    * Operating case temperature range
      -TC = 0'C to +95'C

Features

    * Double-data-rate architecture; two data transfers per clock cycle
    * The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
    * Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
    * DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
    * Differential clock inputs (CK and /CK)
    * DLL aligns DQ and DQS transitions with CK transitions
    * Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
    * Data mask (DM) for write data
    * Posted /CAS by programmable additive latency for better command and data bus efficiency
    * Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
    * Programmable RDQS, /RDQS output for making x 8 organization compatible to x 4 organization
    * /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation