1gb Pc3200 Ddr 400 Mhz - Samsung

VIA P4X266A
VIA KT266/333 (except ASUS KT266/333)
VIA KT600 (except ASUS KT600)
VIA PT800
SIS 645
SIS 648
648FX
SIS 746FX
KM400
KM266/266/266a
K8T800
KT 880
KT 400
KT 400A

• Performance: PC3200
• Dual Channel ready
  
• 2.5 Volts
  
• DQ DQ Burst Frequency: 400MHz
• Inputs and outputs are SSTL-18 compatible
• CAS latency 3.0
• 128x4 X 2 DDR SDRAM CHIP CONFIGURATION
• SDRAM have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble and one-half clock post-amble
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
• Burst Type: Sequential or Interleave
• Burst Length: 4, 8
• Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• Serial Presence Detect
• SDRAMs in FBGA Package
• RoHs compliance
• • 184-pin unbuffered DIMM
  • Density: High Density
  • PC3200 400FSB
  • 2.5 Volts
  • 6 Layer unbuffered
  • CAS Latency 3
  • 4 Bank
  • Off-chip driver (OCD) impedance adjustment, and on die termination (ODT)